Model Number

monocrystalline silicon wafer

1. Material - Monocrystalline Silicon
2. Growth - Crucible pulled (CZ)
3. Conduction type - n (SEMI MF 42-02)
4. Doping element - phosphorus
5. Surface orientation - (100) ± 3º (SEMI MF 26-0305)
6. Resistivity * 0, 5 3, 5 (SEMI MF 43-99)
7. Minority carrier life time > 100 (SEMI MF 1535-1104, micro PCD)
8. Oxygen concentration ≤ 110 18. ./ 3 (ASTM F 121-83)
9. Carbon concentration ≤ 510 16. ./ 3 (ASTM F 121-86)
10. Etch Pits Density (EPD) < 300 -2 (SEMI MF 1725-1103)
11. Wafer Surface Quality As cut, clean and free from stains without shining surface
12. Chips(one-sided) Not more than two are permitted, with depth less than 0, 8 mm and not longer than 1, 0 mm Note chips less than 0, 2 mm in depth are not considered.
13. Edge defects ≤ 2 per wafer, in depth ≤ 0, 5 .
14. Diameter (166, 2 ± 1) .
15. Pseudo-square Size 125, 0 +0.5
16. Thickness (220 ± 30) (SEMI MF 533-02)
17. Thickness Variation (TTV) ≤40 (SEMI MF 533-02)
18. Maximum variation of pseudo-square sides squarness 7, 0 9, 0 .
19. Saw marks < 20
20. Packing Thermocontractable film and foam plastic box
21. Accompanying Documentation - Packing List, - Certificate of Origin
FCA Krasnoyarsk
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